A Reliability Study of Non-uniform Si TFET with Dual Material Source: Impact of Interface Trap Charges and Temperature

The article reports the extraction of DC characteristics and small signal parameters Non-uniform Si TFET with dual material source (NUTFET-DMS) at different frequencies followed by its reliability investigation. device is examined analysing: (1) impact presence interface trap charges, (2) temperature variation (200- 400 K). In analysis it has been observed that in case absence charges increase frequency reduces value parasitic capacitances. addition, lessens capacitances up to a certain gate voltage after shows reverse effect. Further, perceived effect change more on ambipolar current when are present, whereas true OFF state